savantic semiconductor product specification silicon pnp power transistors 2SA1261 d escription with ito-220 package high switching speed low collector saturation voltage complement to type 2sc3157 applications for high voltage ,high speed and power switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -7 v i c collector current -10 a i cm collector current-peak -20 a i b base current -3.5 a t a =25 1.5 p t total power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (ito-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1261 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-5a ;i b1 =-0.5a;l=1mh -100 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -0.6 v v besat base-emitter saturation voltage i c =-5a; i b =-0.5a -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -0.01 ma i cex collector cut-off current v ce =-100v; v be =-1.5v ta=125 -0.01 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.01 ma h fe-1 dc current gain i c =-0.5a ; v ce =-5v 40 200 h fe-2 dc current gain i c =-3a ; v ce =-5v 40 200 h fe-3 dc current gain i c =-5a ; v ce =-5v 20 switching times t on turn-on time 0.5 s t s storage time 1.5 s t f fall time i c =-5a;i b1 =-i b2 =-0.5a , r l =10 @ ;v cc =-50v 0.5 s h fe-2 classifications m l k 40-80 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1261 package outline fig.2 outline dimensions (unindicated tolerance: 0.20 mm)
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